Publication Date:
2010
abstract:
A semi-empirical tight-binding Hamiltonian based on density functional theory is used to study scattering of defects in H-passivated (110)SiNWs. The effect of surface dangling bonds and the presence of oxygen on the coherent transport is considered. The scattering at Si vacancies is also studied.
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Pecchia, Alessandro
Book title:
2010 14TH INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE 2010)