Evidence for a dose dependence for thermal redistribution of implanted silicon in SiO2

The redistribution of implanted Si-30 atoms in isotopically purified (SiO2)-Si-28 thermal oxide is studied as functions of temperature and implanted dose. The results clearly evidence a diffusion enhancement, which is more pronounced at low temperature and high dose. The results are consistent with the simple picture that the redistribution is governed by a Si interstitial diffusion mechanism, which can be slowed down by the presence of residual impurities. (c) 2006 Elsevier B.V. All rights reserved.