Integration of SnO2 sol-gel processes to gas sensor microfabrication: H-2 and CO sensitivity evaluation

Sol-gel organic synthesis of SnO2 thin films from tin ethoxide precursor is reported here as a promising and cheap alternative of the "classical" chemical and physical preparation methods of the SnO2 thin films, for gas sensing applications. A simple, integrated circuit compatible test structure, for rapid evaluation of the sensing properties of the SnO2 sol-gel derived thin films is described. The main features of our microstructure consist of a heating resistor integrated on chip, made of highly boron doped silicon and a metallisation system from Au/W deposited on a planarized chemically vapor deposited SiO2 layer. The SnO2 films have shown the well-known increase-maximum-decrease dependence of chemoresistance as a function of temperature, with a maximum at about 380 degrees C, when they are measured in clean, dry air. The sensitivity of SnO2 films to high concentration of H-2 in air (4500-16000 ppm) was studied within a quartz furnace, externally heated in the temperature range from 200 to 450 degrees C. The relative sensitivity is equal to 100% at temperatures as row as 200 degrees C, while its maximum value is anticipated to be above 450 degrees C. The CO sensing properties of SnO2 layers were evaluated as a function of input power applied on the integrated heating resistor. We have obtained relative sensitivities of 30% for 500 ppm CO concentration in dry air and an input power of 209 mW.