X-ray irradiation on 4H-SiC MOS capacitors processed under different annealing conditions

The overall radiation response to X-ray exposure of metal-oxide-semiconductor (MOS) capacitors, subjected to two different post-deposition-annealing processes in N2O or POCl3 atmospheres, was investigated by capacitance-voltage (C-V) analyses. The production rate and saturation density of electrically active defects, different for the two oxides, demonstrated an additional contribution to the defects formation coming from the annealing treatements. The higher susceptibility of the POCl3-annealed oxide respect to the N2O annealed is discussed.