Electrical characterization of nanowires fabricated on a Si/SiGe 2DEG

Conference Paper
Publication Date:
2001
abstract:
In the present paper we report the electrical transport characterization of nanowires obtained by electron beam lithography and etching of (100) Si/SiGe heterostructures with a high mobility 2D electron gas.
Iris type:
04.01 Contributo in Atti di convegno
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/201549
Book title:
Precision Engineering, Nanotechnology: Proceedings of the Euspen : 2nd International Conference European Society for Precision Engineering and Nanotechnology