Oxidation of nitrogen-implanted silicon: Comparison of nitrogen distribution and electrical properties of oxides formed by very low and medium energy N2 + implantation

The Nitrogen distribution and electrical properties of ultrathin oxides which were grown under the very low and medium energy nitrogen-implanted silicon, were compared. It was observed that static current in depletion was carried out mainly by tunneling of electrons from A1 Fermi Level through the oxide into the interface state, and then it was also found to recombine with holes near the Si/SiO2. The oxide reduction decreased as the implantation energy was found to decrease from medium to low values. The results show that oxides formed through very low energy implants reveal superior electrical properties in terms of surface states and leakage currents due to the low damage induced in the Si substrate.