ASSESSMENT OF MOCVD-GROWN ZnSe EPILAYERS ON GaAs BY MEANS OF SYNCHROTRON RADIATION TOPOGRAPHY
Academic Article
Publication Date:
2001
abstract:
Synchrotron X-ray reflection topography was used to observe the onset of formation of the strain-relieving misfit dislocations in ZnSe epilayers grown by metalorganic chemical vapor deposition (MOCVD) on low dislocation density (100)GaAs substrates.
Iris type:
01.01 Articolo in rivista
Keywords:
SYNCHROTRON RADIATION TOPOGRAPHY;MOCVD;ZnSe epilayers
List of contributors:
Prete, Paola
Published in: