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Morphology of self-assembled InAs quantum dots on GaAs(001)

Conference Paper
Publication Date:
2002
abstract:
We have followed by Atomic Force Microscopy (AFM) the epitaxial growth of InAs on GaAs(001) starting from the initial formation of a strained two-dimensional wetting layer up to the self-assembled nucleation and growth of 3D nanoparticles. In this work we underline many aspects of the morphology of this system, which substantiate the role either of kinetics on thermodynamics in the process of growth as well as the role of surface instabilities in controlling lateral ordering of the nanoaggregates.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
Atomic force microscopy; Epitaxial growth; Morphology; Nanostructured materials; Nucleation; Reaction kinetics; Self assembly; Semiconducting gallium arsenide; Semiconducting indium compounds; Thermodynamic stability; Wetting
List of contributors:
Schiumarini, Donatella; Placidi, Ernesto
Authors of the University:
SCHIUMARINI DONATELLA
Handle:
https://iris.cnr.it/handle/20.500.14243/221308
Published in:
MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS
Journal
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URL

http://dx.doi.org/10.1557/PROC-707-N6.7.1
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