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Morphology of Self-Assembled InAs Quantum Dots on GaAs (001).

Contributo in Atti di convegno
Data di Pubblicazione:
2002
Abstract:
We have followed by Atomic Force Microscopy (AFM) the epitaxial growth of InAs on GaAs(001) starting from the initial formation of a strained two-dimensional wetting layer up to the self-assembled nucleation and growth of 3D nanoparticles. In this work we underline many aspects of the morphology of this system, which substantiate the role either of kinetics on thermodynamics in the process of growth as well as the role of surface instabilities in controlling lateral ordering of the nanoaggregates.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
Atomic force microscopy; Dislocations (crystals); Molecular beam epitaxy; Morphology; Nanostructured materials; Nucleation; Phase diagrams; Reaction kinetics; Self assembly; Semiconducting gallium arsenide; Semiconducting indium compounds; Thermodynamics
Elenco autori:
Schiumarini, Donatella; Placidi, Ernesto
Autori di Ateneo:
SCHIUMARINI DONATELLA
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/221303
Pubblicato in:
MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS
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http://journals.cambridge.org/action/displayAbstract?fromPage=online&aid=8221046
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