Delocalized-localized transition in a semiconductor two-dimensional honeycomb lattice

We report the magnetotransport properties of a two-dimensional electron gas in a modulation-doped AlGaAs/GaAs heterostructure subjected to a lateral potential with honeycomb geometry. Periodic oscillations of the magnetoresistance and a delocalized-localized transition are shown by applying a gate voltage. We argue that electrons in such artificial-graphene lattices offer a promising approach for the simulation of quantum phases dictated by Coulomb interactions. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3493189]