Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films

The electrical activities of stacking faults (SFs) and partial dislocations in 4H-SiC homoepitaxial films were investigated by using the electron-beam-induced current (EBIC) technique. The basal plane dislocation was dissociated into Si-(g) 30 degrees and C-(g) 30 degrees partials under electron-beam irradiation, with a SF formed in between. The SF shows bright contrast at RT and dark contrast at 50 K in EBIC images. The reasons were discussed according to the quantum-well state of SF. C-(g) 30 degrees partial is always more electrically active than Si-(g) 30 degrees partial at each specific accelerating voltage. The EBIC contrasts of those two partials were discussed with the number of recombination centers. (c) 2008 Elsevier Ltd. All rights reserved.