Suspended InAs Nanowire-Based Devices for Thermal Conductivity Measurement Using the 3? Method

We demonstrated device architectures implementing suspended InAs nanowires for thermal conductivity measurements. To this aim, we exploited a fabrication protocol involving the use of a sacrificial layer. The relatively large aspect ratio of our nanostructures combined with their low electrical resistance allows to exploit the four-probe 3x technique to measure the thermal conductivity, inducing electrical self-heating in the nanowire at frequency x and measuring the voltage drop across the nanostructure at frequency 3x. In our systems, field effect modulation of the transport properties can be achieved exploiting fabricated sidegate electrodes in combination with the SiO2/Si ++ substrate acting as a back gate. Our device architectures can open new routes to the all-electrical investigation of thermal parameters in III-V semiconductor nanowires, with a potential impact on thermoelectric applications.