Rutherford backscattering studies of ion implanted semiconductors

Chapter
Publication Date:
1997
Iris type:
02.01 Contributo in volume (Capitolo o Saggio)
Keywords:
RBS-CHANNELING SPECTRA; MEV PROTONS; SILICON; SI; DAMAGE; AMORPHIZATION; LAYERS; DISLOCATIONS; SIMULATION; PROFILES
List of contributors:
Handle:
https://iris.cnr.it/handle/20.500.14243/201124
Book title:
EFFECT OF DISORDER AND DEFECTS IN ION-IMPLANTED SEMICONDUCTORS : ELECTRICAL AND PHYSICOCHEMICAL CHARACTERIZATION
Published in:
SEMICONDUCTORS AND SEMIMETALS
Journal