Publication Date:
1995
abstract:
In + As + Sb alloys have been deposited onto Ni and Ti cathodes from tartaric acid solutions at pH 2. Homogeneous deposits of composition suitable for achieving InAsxSb1-x can be obtained from this medium. The As-to-Sb ratio can be controlled by properly selecting solution composition and deposition potential.
X-ray photoelectron spectroscopy and X-ray diffraction analyses show that formation of III-V compounds occurs at room temperature. In reacts preferentially with As rather than with Sb, but crystalline phases formed at room temperature are Sb-rich. After annealing the In + As + Sb alloys at 250 degrees C, the composition calculated from cell parameters appears similar to that measured by energy-dispersive X-ray analysis, suggesting that the entire deposit has been converted into the InAsxSb1-x crystalline phase.
Iris type:
01.01 Articolo in rivista
Keywords:
Cathodic deposition; In+As+Sb alloys; InAsxSb1-x; Thin-film semiconductors
List of contributors:
Casellato, Umberto; Guerriero, Paolo; Musiani, Marco; Cattarin, Sandro
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