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Mesoscopic capacitor effect in GaN/AlGaN quantum wells

Contributo in Atti di convegno
Data di Pubblicazione:
2000
Abstract:
We show that wide GaN quantum wells behave like mesoscopic capacitors. The electron-hole pairs, are separated by the spontaneous and piezoelectric polarization fields and accumulated in the well. resulting in a well width dependent screening of the built-in field. The extent to which such screening is effective depends on the non-radiative recombination probability which depletes the ground level of the quantum well, causing the recovery of the unscreened built infield. The account of the mesoscopic capacitor effect provides a quantitative description of the optical spectra of a set of high quality quantum wells, with well characterized structural parameters.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
GaN/AlGaN MQWs; piezoelectric field; PIEZOELECTRIC FIELDS; POLARIZATION-FIELDS; WIDTH DEPENDENCE; NITRIDES
Elenco autori:
Napolitani, Enrico
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/201057
Titolo del libro:
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS
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