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Electronic properties of phases in the quasi-binary Bi2Se3-Bi2S3 system

Articolo
Data di Pubblicazione:
2021
Abstract:
We explored the properties of the quasi-binary BiSe-BiSsystem over a wide compositional range. X-ray diffraction analysis demonstrates that rhombohedral crystals can be synthesized within the solid solution interval 0-22 mol% BiS, while at 33 mol% BiSonly orthorhombic crystals are obtained. Core level photoemission spectroscopy reveals the presence of Bi, Seand Sspecies and the absence of metallic species, thus indicating that S incorporation into BiSeproceeds prevalently through the substitution of Se with S. Spin- and angle-resolved photoemission spectroscopy shows that topological surface states develop on the surfaces of the BiSeS(y<=0.66) rhombohedral crystals, in close analogy with the prototypical case of BiSe, while the orthorhombic crystals with higher S content turn out to be trivial semiconductors. Our results connect unambiguously the phase diagram and electronic properties of the BiSe-BiSsystem.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
topological insulator
Elenco autori:
Bigi, Chiara; Kundu, ASISH KUMAR; Moras, Paolo
Autori di Ateneo:
MORAS PAOLO
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/399425
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