Kinetic growth of Al2O3 thin films using aluminum dimethylisopropoxide as precursor

Aluminum oxide films were grown in a hot-wall low-pressure metal organic chemical vapor deposition system using aluminum dimethylisopropoxide as precursor. A kinetic model was developed which includes an overall heterogeneous reaction with apparent activation energy of 130 kJ/mol. The most promising running conditions were identified at a reaction temperature of 560°C corresponding to a uniform growth rate of about 30 nm/min. Aluminum oxide films resulted amorphous, transparent, stoichiometric, and carbon-free.