Relation between photoluminescence properties and cristalline structure of III-V semiconductor alloys grown by MOVPE

III-V semiconductor alloys, such as a ternary GaInP and a quaternary GaInAsP alloys, are important materials widely used in semiconductor lasers, solar cells, high electron mobility transistor (HEMT) and heterojunction bipolar transistors (HBT). It is well known that within III-V semiconductor epitaxial layers grown by Metalorganic Vapour Phase Epitaxy (MOVPE) technique a periodic composition fluctuation coexists with spontaneously-formed atomically-ordered clusters.