Study of the defects induced by low-energy (100 eV) hydrogen-ions on amorphous silicon dioxide

The low-energy (100 eV) hydrogen-ion bombardment effects on a-SiOz have been investigated by using synchrotron radiation photoemission spectroscopies. The argon bombardment effects have also been studied, in order to discriminate between physical and chemical characters in the hydrogen/a-SiO2, interaction. Our results show that hydrogen treatment produces predominantly Si-H defects, which are observed to induce gap states in a-SiO2.