Al⁺ ion implanted 4H-SiC: Electrical activation versus annealing time

Previous and recent results on the electrical activation of ion implanted Alin 4H-SiC are analyzed. Samples with homogeneous ion implanted dopant concentrations in the decades 10-10 cm, implantation temperatures in the range 300-400 °C, post implantation annealing temperatures in the range 1500-1950 °C, and post implantation annealing times in the range 5 min - 75.5 h are taken into account. The selected results fulfill the requirement of minimum two annealing times per annealing temperature and per ion implantation conditions. A new insight on the dynamics of the post implantation annealing in Al implanted 4H-SiC takes origin from this data analysis.