High Resistivity in GaInP/GaAs by High Temperture Fe Ion Implantation
Contributo in Atti di convegno
Data di Pubblicazione:
2005
Abstract:
We investigated the structural and electrical behavior of Fe implanted and annealed MOVPE grown GaInP layers lattice matched to GaAs substrates, demonstrating that high temperature Fe implantation can give rise to stable semi-insulating layers.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Elenco autori:
Priolo, Francesco; Impellizzeri, Giuliana
Link alla scheda completa:
Titolo del libro:
IEEE (Institute of Electrical and Electronics Engineers), 2005 International Conference of Indium Phosphide and Related Materials 0-7803-8891-7, 653 (2005), USA