In-plane bandgap engineering by modulated hydrogenation of dilute nitride semiconductors

We present two different methods to pattern the band gap of dilute nitrides in their growth plane by exploiting the unique capability of H to passivate N in these materials. By deposition of metallic masks on and subsequent H irradiation of GaAs1-xNx, we artificially create zones of the crystal having the band gap of untreated GaAs1-xNx well surrounded by GaAs-like barriers. Alternatively, by focusing an energetic e(-)-beam on the surface of hydrogenated GaAs1-xNx we displace H atoms from their N passivation sites, thus leading to a controlled decrease in the crystal band gap in the spatial region where the e(-)-beam is steered.