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Step height oscillations during layer-by-layer growth of Pb on Ge(001)

Articolo
Data di Pubblicazione:
1997
Abstract:
Heteroepitaxial growth of Pb on the Ge(001) surface has been studied by He atom scattering. For low substrate temperatures, Pb is found to grow layer by layer with (111) orientation. A detailed analysis of the specular peak profile as a function of the He wave vector reveals that the step height of the growing monatomic terraces oscillates with the him thickness. This variation, initially as large as +/-15% around the value of the Pb(Ill) bulk interlayer spacing, gradually dampens out after the deposition of a dozen monolayers. This is direct evidence of quantum size effects affecting the interlayer distance of a growing metal film.
Tipologia CRIS:
01.01 Articolo in rivista
Elenco autori:
Morgante, Alberto; Gotter, Roberto; Floreano, Luca
Autori di Ateneo:
FLOREANO LUCA
GOTTER ROBERTO
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/123618
Pubblicato in:
PHYSICAL REVIEW LETTERS (PRINT)
Journal
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