Fabrication of Site-Controlled Quantum Dots by Spatially Selective Incorporation of Hydrogen in Ga(AsN)/GaAs Heterostructures

Full control over size, density, and positioning of semiconductor quantum dots (QDs) is desirable in numerous potential devices. This control is diffi cult to attain by bottom-up methods that rely on random self-assembly. Conversely, a high number of processing and regrowth steps, a small density of nanostructures, and carrier depletion near surfaces are often drawbacks of top-down approaches. Recently, we developed an alternative route toward the patterning of III-V semiconductor heterostructures based on a defect-engineering approach exploiting the hydrogen-induced passivation of N atoms in Ga(AsN), (InGa)(AsN), and Ga(PN) crystals.