High-resistance buried layers by MeV Fe implantation in n-type InP

We performed 2 MeV Fe implantation at a temperature of 200 degrees C on n-type InP substrates with different background doping concentrations. We studied the activation of Fe atoms as compensating deep acceptors and the electrical properties of the implanted layers. Simulation of the current-voltage characteristics coupled with secondary ion mass spectrometry depth profiling was used to extract important parameters such as the activated Fe fraction, the resistivity, and the thickness of the compensated layers. Our results show that resistivities of the order of 10(7) Omega cm can also be obtained for background doping concentrations higher than 1x10(18) cm(-3), with active Fe concentration well above the known solid solubility limit