Semi-insulating behaviour in Fe MeV implanted n-type InP

MeV implantation of iron in n-doped InP at elevated temperature was investigated, in order to determine the Fe lattice location and to study the electrical activation of Fe as compensating deep acceptor. Proton induced X-ray Emission (PIXE) and Rutherford Backscattering (RBS) were used for determination of the lattice location by performing angular scans across major crystal directions, whereas Secondary Ions Mass Spectrometry (SIMS) was employed for Fe depth profiling. Current-voltage characteristics were measured to determine the resistivity of the implanted layers. Despite the low substitutional Fe fraction present after the annealing, the implanted samples show a high resistive behaviour, demonstrating the possibility to compensate an initial doping level of the order of 10(18) cm(-3)