Effects of melt composition on deep electronic states and compensation ratios in n-type LEC gallium arsenide

In this paper it is shown that the melt composition is a key parameter in the crystal growth of GaAs as it strongly affects the concentration of deep electron levels as well as the electrical activity of the silicon atoms added to the melt in order to get a n-type material. Experimental data collected on several samples are included. The correlations between melt stoichiometry and generation/annihilation of point defects as well as electronic properties are discussed considering the existing literature references.