Quasi-Schottky contacts on n-In0.35Ga0.65As epitaxial layers deposited on GaAs substrates

Al Schottky barriers have been prepared on n-In0.35Ga0.65As/buffer/GaAs structures using InxGa1-xAs buffers with different grading laws to reduce the defect density induced by lattice mismatch in the active In0.35Ga0.65As layer. Counter doped p(+) cap layers have been used to enhance the barriers. Using suitable cap and buffer parameters, barrier heights up to 0.67eV and ideality factors of 1.15 have been obtained.