Thermoelectric Analysis of ZnSb Thin Films Prepared by ns-Pulsed Laser Deposition

Zinc antimonide (ZnSb) is a promising thermoelectric material for the temperature range 300-600 K. ZnSb thin films were prepared by nanosecond Pulsed Laser Deposition (PLD) to evaluate the performance of nanostructured films for thermoelectric conversion by the determination of the Power Factor. A study of the influence of structural, compositional and thermoelectric properties of thin films is reported as a function of different deposition parameters, such as repetition rate, pulse energy, and substrate temperature. The evaluation of a thin film ZnSb compound with excess Sb has been performed to verify the variation of the thermoelectric properties. The obtained results are reported and discussed in the 300-600 K temperature range.