Optical Properties of Silicon Nanodots in SiC Matrix

We present our results on plasma deposited Si-SiC. The optical properties of the silicon rich SiC matrix as a function of stoichiometry are reported. The results are then used as starting values for the simulation of the annealed material. The optical simulation correctly predicts the initial silicon nanoparticles precipitation upon low temperature annealing. For higher annealing temperatures of 900°C and higher, we observe separate crystallization of the Si and SiC phases. The phase composition is determined by making use of optical simulation. The crystallized Si results to be well simulated using the optical function of unstructured c-Si. The excess absorption of the crystallized SiC matrix is evidenced and determined.