A study on 3C-sic carbonization on misoriented si substrates: From research to production scale reactors

In this work we have studied the effect of carbonization of misoriented Si substrates on void formation during the growth of 3C-SiC, using different thermal ramp rates and shapes. We observed that the heating rate (°C/sec) from carbonization temperature to film growth temperature plays a major role in controlling the void density. Moreover, the introduction of silane at different temperatures during the heating ramp permits to suppress void formation. The studies were performed on a small research reactor and the results were successfully transferred to a production scale reactor, aimed to the production of 3C-SiC power devices manufactured on 100 and 150 mm Si substrates.