Defect structures and impurity distribution inhomogeneities in LEC GaAs crystals

The defect structures, including slip traces, originating from the interaction between dislocations and impurities in n-type LEC GaAs, grown from either As- or Ga-rich melts, have been investigated. The crystals were doped with either Si, S or Te. Independently of the dopant used, the gettering regions around dislocations have been found to be mostly depleted of dopant atoms suggesting that EL2 is generated, rather than gettered, by the dislocations.