Study of the dislocation atmospheres in n-type GaAs by DSL photoetching, EBIC and microRaman measurements

Typical dislocation atmospheres of different n-type GaAs wafers have been studied by means of DSL photoetching, SEM-EBIC and microRaman spectroscopy. Different aspects concerning the properties of these defects have been studied, i.e. local crystal misorientation, carrier depletion depth, local doping and residual strain.