Data di Pubblicazione:
1995
Abstract:
Category II and category III defects left after annealing, i. e. end-of-range extrinsic dislocation loops and intrinsic stacking fault tetrahedra due to solid-phase epitaxial regrowth, are studied in 200 KeV Fe implanted InP. By increasing the annealing time loop coarsening occurs, very likely starting from an initial distribution of very small loops, whereas the density of category III defects decreases.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
InP; Fe; implantation; TEM
Elenco autori:
Frigeri, Cesare
Link alla scheda completa:
Titolo del libro:
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4
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