DEPENDENCE OF I-V CHARACTERISTICS OF GaAs n** plus -n-n** plus DIODES ON THE ACTIVE REGION LENGTH

Articolo
Data di Pubblicazione:
1984
Abstract:
The authors measured the current-voltage characteristics of diodes made of different epitaxial n** plus -n-n** plus sandwich structures. The influence of the n-region length before the requirements for ballistic transport are met.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
SEMICONDUCTING GALLIUM ARSENIDE; ballistic transport; SEMICONDUCTOR DIODES
Elenco autori:
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/179198
Pubblicato in:
PHYSICA STATUS SOLIDI. A, APPLIED RESEARCH
Journal