Transient-enhanced diffusion of boron implanted at ultralow energies in silicon: Localization of the source

Academic Article
Publication Date:
2000
Iris type:
01.01 Articolo in rivista
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/179195
Published in:
APPLIED PHYSICS LETTERS
Journal