Electron microscopy techniques for evaluating epitaxial and bulk III-V compound semiconductors
Conference Paper
Publication Date:
1996
abstract:
Electron microscopy is an important technique to study interfaces and microdefects in advanced III-V compound semiconductors. The paper briefly reviews some of the TEM methods used to this purpose and shows examples of their application to the characterization of epitaxial structures such as InGaAs/GaAs and GaAs/Ge as well as processed substrates like implanted InP.
Iris type:
04.01 Contributo in Atti di convegno
Keywords:
III-V semiconductors; electron microscopy; TEM
List of contributors:
Frigeri, Cesare
Book title:
Defect Recognition and Image Processing in Semiconductors 1995
Published in: