Data di Pubblicazione:
1997
Abstract:
The anomalous diffusion of Fe implanted into InP has been studied by SIMS and TEM. From the close correspondence, observed in the annealed samples, between the positions of the two Fe accumulation peaks around R-p + Delta R-p and the positions of the end of range loops and of the bottom interface of the twin band, respectively, it is suggested that the Fe distribution can be affected by gettering at the mentioned crystal defects. The origin of the Fe peak at 0.8 R-p is also discussed.
Tipologia CRIS:
04.01 Contributo in Atti di convegno
Keywords:
InP; Fe; implantation; TEM
Elenco autori:
Frigeri, Cesare
Link alla scheda completa:
Titolo del libro:
MICROSCOPY OF SEMICONDUCTING MATERIALS 1997
Pubblicato in: