Effect of stress on accumulation of oxygen in silicon implanted with helium and hydrogen

Pronounced oxygen segregation in helium-implanted Czochralski silicon, Cz-Si: He, treated at 1000-1400 K under atmospheric or enhanced, up to 1.2 x 10(9) Pa, hydrostatic pressure, HP, is observed. Annealing of hydrogen-implanted Cz-Si: Hat 720-920 K-10(5)Pa also results in the oxygen accumulation in the damaged volume while no accumulation is detected at greater than or equal to 1 GPa and at greater than or equal to 1230 K. The HP effect on transformation of post-implantation defects and on oxygen diffusivity can be responsible for oxygen accumulation in Cz-Si -.(He, H).