Data di Pubblicazione:
2007
Abstract:
When external-cavity diode lasers are used in dimensional metrology via optical interferometry, parasitic modes and background radiation deserve careful investigation. This paper gives the relevant measurement equation and explicit formulae for the excess phase of travelling fringes. Particular emphasis is given to potential errors in the measurement of the Si lattice parameter by combined x-ray and optical interferometry.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
metrological applications of diode lasers; interferometry; parasitic modes; X-RAY INTERFEROMETRY; VOLUME DETERMINATION; SILICON SPHERE; NONLINEARITY; MILLIMETER; RESOLUTION; LIGHT; NM
Elenco autori:
Galzerano, Gianluca
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