Fabrication and characterization of strained InGaAs quantum wires grown on high index V-grooved GaAs substrates by LP-MOVPE

Self-ordered InGaAs/GaAs quantum wires (QWRs) were obtained on (100) GaAs V-grooved substrates by low-pressure metal-organic vapor phase epitaxy. Different structural and optical properties of compressively strained InGaAs wires grown on grooves exhibiting (111)A-like and (311)-like oriented facets were investigated.