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Schottky Contacts to Silicon Carbide: Physics, Technology and Applications

Capitolo di libro
Data di Pubblicazione:
2018
Abstract:
Understanding the physics and technology of Schottky contacts to Silicon Carbide is important, for both academic and industrial researchers. In fact, the rectifying contact is a tool for studying carrier transport at metal/semiconductor interfaces, as well as forming the main building block of the Schottky Barrier Diode. In this chapter, the physics of metal/SiC rectifying contacts and the technology of 4H-SiC Schottky diodes are reviewed, presenting a survey of relevant results on this topic, from fundamental concepts of Schottky barriers, to practical information for real device fabrication. Selected examples of 4H-SiC Schottky diodes applications are also briefly discussed.
Tipologia CRIS:
02.01 Contributo in volume (Capitolo o Saggio)
Keywords:
Silicon Carbide; Schottky Contact; Barrier Height; Diode; Wide Band Gap Power Electronics
Elenco autori:
Roccaforte, Fabrizio; Giannazzo, Filippo
Autori di Ateneo:
GIANNAZZO FILIPPO
ROCCAFORTE FABRIZIO
Link alla scheda completa:
https://iris.cnr.it/handle/20.500.14243/410196
Titolo del libro:
Advancing Silicon Carbide Electronics Technology
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https://www.mrforum.com/product/9781945291852-3/
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