All-silicon Fabry-Perot modulator based on the thermo-optic effect

This paper describes an experimental investigation of the operation at 1.5 ?m of an electrically driven thermo-optic Si Fabry-Peort modulator which achieves upto 55% intensity modulation depth. Design of optimal integrated devices is simulated by 3-D numerical analysis using a numerical code, and operating frequencies of hundreds of kHz unaffected by temperature fluctuations, are predicted.