Publication Date:
1996
abstract:
The conduction band offset in ZnSe/GaAs n-p heterodiodes was determined from measurements of the low-temperature tunneling current of photoinjected carriers. We found widely different discontinuities for heterojunctions fabricated with different Zn/Se flux ratios, with conduction band offsets as high as 0.75 eV for Se-rich interfaces, and as low as 0.26 eV for Zn-rich interfaces.
Iris type:
01.01 Articolo in rivista
List of contributors:
Beltram, Fabio; Franciosi, Alfonso; Sorba, Lucia; Lazzarino, Marco; Rubini, Silvia; Pellegrini, Vittorio
Published in: