Hot-wire chemical vapor deposition of chalcogenide materials for phase change memory applications

In this communication, we report on the successful growth of chalcogenide films with required functional properties for PCM applications by the combination of hot-wire MOCVD (HW-CVD) and pulsed liquid injection (l.i.) MOCVD.11 The elaborated method (HW-l.i.-CVD) is easily integrable because it does not require the use of plasma and/or hydrogen. The inherent key advantages of this deposition technique are the greater control of film composition, including doping possibility, and conformality over nonplanar structures, superior to those obtained by sputtering. Moreover, because of the catalytic decomposition of precursors and the use of diluted solutions, improved surface quality, higher growth rates, and wider precursor compatibility than with conventional thermal MOCVD are reached.