Interfacial properties of SiO2 grown on 4H-SiC: comparison between N2O and Wet O2 oxidation ambient

Conference Poster
Publication Date:
2005
Iris type:
04.03 Poster in Atti di convegno
Keywords:
wide band gap semiconductors; 4H-SiC; n-type MOS; oxynitridation; interface state density
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/86700