Current analysis of ion implanted p+/n 4H-SiC junctions: post-implantation annealing in Ar ambient

Conference Poster

Publication Date:

2005

Iris type:

04.03 Poster in Atti di convegno

Keywords:

wide band gap semiconductors; 4H-SiC; ion implanted diodes; lekage currents

List of contributors:

Bergamini, Fabio; Moscatelli, Francesco; Canino, MARIA CONCETTA; Poggi, Antonella; Nipoti, Roberta

Authors of the University:

CANINO MARIACONCETTA

MOSCATELLI FRANCESCO

POGGI ANTONELLA

Handle:

https://iris.cnr.it/handle/20.500.14243/86697