Fabrication of MOS Capacitors by Wet Oxidation of p-type 4H-SiC

Conference Poster
Publication Date:
2006
Iris type:
04.03 Poster in Atti di convegno
Keywords:
4H-SiC; p-MOS; interface trap; N implantation
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/86689