Phosphorus ion implantation in SiC: recovery of the implantation damage by low temperature annealing

Conference Poster
Publication Date:
2007
Iris type:
04.03 Poster in Atti di convegno
Keywords:
wide band gap semiconductor; electronic devices; post implantation annealing; 6H-SiC
List of contributors:
Authors of the University:
Handle:
https://iris.cnr.it/handle/20.500.14243/86685