Synchrotron radiation photoelectron spectroscopy of the O(2s) core level as a tool for monitoring the reducing effects of ion bombardment on SnO2 thin films
Articolo
Data di Pubblicazione:
1996
Abstract:
Synchrotron radiation ultraviolet photoemission spectroscopy (UPS) of O(2s) core levels, valence band (VB) and Sn(4d) spectroscopy was used to monitor the effect of Ar+ sputtering on SnO2 films. The decrease of the O(2s) peak intensity and the increase of the Sn2+ component in the Sn(4d) peak could be satisfactorily correlated with the enhancement of the band gap feature, occurring at 2.9 eV in the VB spectrum,never been due to the formation of Sn(5s-5p) states.
Tipologia CRIS:
01.01 Articolo in rivista
Keywords:
Argon; Ion bombardment; Oxides; Photoelectron spectroscopy; Sputtering; Synchrotron radiation; Thin films; Tin oxides; Semiconducting tin compounds
Elenco autori:
DE PADOVA, IRENE PAOLA; Larciprete, Rosanna; Matteucci, Maurizio; Ottaviani, Carlo; Perfetti, Paolo; Quaresima, Claudio; Zacchigna, Michele; Crotti, Corrado
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